Effect of Interfacial Alloying versus “Volume Scaling” on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots
نویسندگان
چکیده
منابع مشابه
Auger Recombination in Semiconductor Quantum Wells
The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2017
ISSN: 1530-6984,1530-6992
DOI: 10.1021/acs.nanolett.7b02438